| 摘要 |
<p>Invention relates to production of silicon. The method of purifying silicon in vacuum includes loading of a burden into a cylindrical tank, treatment with electron beams, and holding for evaporation of impurities and their derivatives, intermittently reducing temperature and stirring a melt, cooling of the melt, obtaining purifiedsilicon. Holding of the melt is carried out at temperature above the melting temperature of silicon, but during the cooling stage the temperature is reduced several times and repeatedly raised to the holding temperature.</p> |
