发明名称 METHOD OF PRESSURE RESISTIVE TENSOR TRANSDUCER BUILT AROUND THIN-FILM NANO- AND MICROELECTROMECHANICAL SYSTEM (MAMOS)
摘要 FIELD: instrument making.SUBSTANCE: proposed method consists in grinding of membrane surface, forming thereon of dielectric film and strain gages with low-resistance jumpers and contact sites there between and connecting output terminals to contact sites. After connecting of said output conductors to contact sites of MAMOS, voltage (or feed current) is switched on and kept up for time required for settlement of initial output signal to magnitude U=U±?(U), where Uis MAMOS initial output signal magnitude, ?(U) is admissible fluctuation of initial output signal. Voltage (or feed current) is switched off. After keeping MAMOS in OFF state for time sufficient for rendering said system to state before switching on of voltage (or feed current), voltage (or feed current) is switched on to define time interval ?(?) from switching of voltage to initial output signal of test magnitude U=U±?(U), where ?(U)=?Uis admissible deviation of initial output signal U; ?us transducer basic error; U- is nominal output signal of the transducer. In case time interval ?(?) from switching of voltage (or feed current) to initial output signal of test magnitude Udoes not exceed tolerable magnitude taken as a time stability criterion and defined experimentally by statistical data for particular transducer, then this assembly is transferred to next operations.EFFECT: higher time stability, longer life, lower error at transient temperatures and higher vibration accelerations.2 dwg
申请公布号 RU2528541(C1) 申请公布日期 2014.09.20
申请号 RU20130121644 申请日期 2013.05.08
申请人 OTKRYTOE AKTSIONERNOE OBSHCHESTVO "NAUCHNO-ISSLEDOVATEL'SKIJ INSTITUT FIZICHESKIKH IZMERENIJ" 发明人 BELOZUBOV EVGENIJ MIKHAJLOVICH;DMITRIENKO ALEKSEJ GENNADIEVICH;BELOZUBOVA NINA EVGEN'EVNA
分类号 G01L9/00 主分类号 G01L9/00
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