| 发明名称 |
A METHOD FOR PREPARING GRAPHEME |
| 摘要 |
Provided is a method for manufacturing graphene with much higher yield at much lower temperature, as a method for manufacturing graphene comprising a step for providing gas including CO_2, CH_4, and H_2O on a metal catalyst for growing graphene. |
| 申请公布号 |
KR20140111548(A) |
申请公布日期 |
2014.09.19 |
| 申请号 |
KR20130025846 |
申请日期 |
2013.03.11 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SON, IN HYUK;LEE, SEUNG JAE |
| 分类号 |
C01B31/02;B01J23/755;B82B1/00;B82B3/00 |
主分类号 |
C01B31/02 |
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