| 摘要 |
<p>A method of forming a FINFET with rounded source/drain profile, includes a step of forming a fin in a substrate; a step of etching a fin source/drain recess, a step of forming source/drain layers in the source/drain recess; and a step of etching at least one among the source/drain layers. The source/drain layers can be silicon germanium compounds. Etching on the source/drain layers can include partly etching the source/drain layers, respectively before the post layer of the source/drain layers is formed. The source/drain layers can be formed to have a thickness of about 15 nm at an upper end corner. The source/drain layers can be etched by about 3 nm, respectively before the post layer of the source/drain layers is formed. A step of forming the source/drain layers selectively includes forming at least five source/drain layers.</p> |
