MAGNETORESISTIVE STRUCTURE, MAGNETIC RANDOM ACCESS MEMORY DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

A magnet resistive structure, a memory element including the same, and a manufacturing method for the magnet resistive structure are disclosed. The magnet resistive structure comprises a first magnetic layer of which the magnet direction is changeable; a second magnetic layer formed to correspond to the first magnetic layer and of which the magnet direction is changeable; and an MR enhancing layer and an intermediate layer formed between the two magnetic layers. Accordingly, the magnet resistive structure having an enhanced magnet resistive ratio is provided.