<p>According to the present invention, a semiconductor light emitting device includes: a semiconductor area having a light emitting structure; an electrode layer formed on the semiconductor area; at least one first hole which is extended form an upper side of the electrode layer to an upper side of the semiconductor area, and exposes the upper side of the electrode layer; and a reflective protection structure which has a reflective area covering the semiconductor layer from an adjacent area of the electrode layer.</p>
申请公布号
KR20140111512(A)
申请公布日期
2014.09.19
申请号
KR20130025751
申请日期
2013.03.11
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
YOON, JU HEON;KIM, GI BUM;KIM, SANG YEON;SONG, SANG YEOB;HUR, WON GOO