Extreme Ultraviolet Lithography Process and Mask

摘要

An extreme ultraviolet lithography (EUVL) process is performed on a target, such as a semiconductor wafer, having a photosensitive layer. The method includes providing a one-dimensional patterned mask along a first direction. The patterned mask includes a substrate including a first region and a second region, a multilayer mirror above the first and second regions, an absorption layer above the multilayer mirror in the second region, and a defect in the first region. The method further includes exposing the patterned mask by an illuminator and setting the patterned mask and the target in relative motion along the first direction while exposing the patterned mask. As a result, an accumulated exposure dose received by the target is an optimized exposure dose.

主权项

1. A lithography process, comprising:
providing a patterned mask having one or more one-dimensional patterns along a first direction; providing a target having a photosensitive layer on it; exposing the patterned mask by an illuminator having an intensity; and setting an image of the patterned mask and the target in relative motion along the first direction over a time, wherein an accumulated exposure dose received by the target during the time is an optimized exposure dose.