HK/MG PROCESS FLOWS FOR P-TYPE SEMICONDUCTOR DEVICES

摘要

The present disclosure provides semiconductor device structures with a first PMOS active region and a second PMOS active region provided within a semiconductor substrate. A silicon germanium channel layer is only formed over the second PMOS active region. Gate electrodes are formed over the first and second PMOS active regions, wherein the gate electrode over the second PMOS active region is formed over the silicon germanium channel.

主权项

1. A method of forming a semiconductor device structure, comprising:
providing a first PMOS active region and a second PMOS active region in a semiconductor substrate; forming a first masking pattern over said first PMOS active region; forming a silicon germanium layer over said second PMOS active region in accordance with said first masking pattern; removing said first masking pattern; and forming gate electrode structures over said first and second PMOS active regions.