| 发明名称 |
LATERAL DOUBLE-DIFFUSED HIGH VOLTAGE DEVICE |
| 摘要 |
A method of forming a device is disclosed. The method includes providing a substrate with a device region. The method also includes forming a transistor in the device region. The transistor includes a gate having first and second sides along a gate direction. The transistor also includes a first doped region adjacent to a first side of the gate, a second doped region adjacent to a second side of the gate, and a channel under the gate. The transistor further includes a channel trench in the channel of the gate, wherein the channel trench is along a trench direction which is at an angle θ other than 90° with respect to the gate direction. |
| 申请公布号 |
US2014264584(A1) |
申请公布日期 |
2014.09.18 |
| 申请号 |
US201313831981 |
申请日期 |
2013.03.15 |
| 申请人 |
GLOBALFOUNDRIES SINGAPORE PTE. LTD. |
发明人 |
ZHANG Guowei;VERMA Purakh Raj |
| 分类号 |
H01L29/66;H01L29/78 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a device comprising:
providing a substrate with a device region; and forming a transistor in the device region, wherein the transistor includes
a gate having first and second sides along a gate direction,a first doped region adjacent to a first side of the gate,a second doped region adjacent to a second side of the gate,a channel under the gate,a channel trench in the channel of the gate, wherein the channel trench is along a trench direction which is at an angle θ other than 90° with respect to the gate direction. |
| 地址 |
Singapore SG |
