发明名称 |
METHODS FOR PROCESSING A SUBSTRATE USING MULTIPLE SUBSTRATE SUPPORT POSITIONS |
摘要 |
In some embodiments, a method for processing a substrate in a process chamber having a substrate support configured to move in a direction perpendicular to a top surface of a cover ring of a process kit may include positioning the substrate support in a first position such that a top surface of the substrate is positioned about 3 mm above to about 10 mm below a top surface of a cover ring of a process kit disposed about the periphery of the substrate support; performing a plasma deposition process while the substrate support is in the first position; moving the substrate support to a second position such that the top surface of the substrate is disposed about 3 mm below to about 15 mm above the top surface of the cover ring; and performing a plasma etch process while the substrate support is in the second position. |
申请公布号 |
US2014263169(A1) |
申请公布日期 |
2014.09.18 |
申请号 |
US201313837261 |
申请日期 |
2013.03.15 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
LEE JOUNG JOO;JOHANSON WILLIAM;MILLER KEITH A.;RITCHIE ALAN A. |
分类号 |
C23C16/50;C23C16/52;H01J37/302;H01J37/305 |
主分类号 |
C23C16/50 |
代理机构 |
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代理人 |
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主权项 |
1. A method for processing a substrate in a process chamber having a substrate support configured to move in a direction perpendicular to a top surface of a cover ring of a process kit, the method comprising:
positioning the substrate support in a first position such that a top surface of the substrate is positioned about 3 mm above to about 10 mm below a top surface of a cover ring of a process kit disposed about the periphery of the substrate support; performing a plasma deposition process within the process chamber while the substrate support is in the first position; moving the substrate support to a second position such that the top surface of the substrate is disposed about 3 mm below to about 15 mm above the top surface of the cover ring, wherein the second position is different from the first position; and performing a plasma etch process within the process chamber while the substrate support is in the second position. |
地址 |
Santa Clara CA US |