SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

A first drift layer (81a) has a first surface (P1) facing a first electrode (98) and electrically connected to the first electrode (98), and a second surface (P2) opposite the first surface (P1). The first drift layer (81a) has an impurity concentration NA. Relaxation areas (71) are provided in portions on the second surface (P2) of the first drift layer (81a). The first drift layer (81a) and a second drift layer (81b) configure a drift area (81) in which the relaxation areas (71) are embedded. The second drift layer (81b) has an impurity concentration NB satisfying NB > NA. A body area (82), a source area (83), and a second electrode (94) are provided upon the second drift layer (81b).