| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated light-receiving device which can improve an operation frequency.SOLUTION: A semiconductor integrated light-receiving device 1A comprises: photoelectric conversion parts 9A-9D to each of which an optical signal La is input, for outputting electric signals, respectively; and signal amplification parts 12A-12D for amplifying the electric signals output from the photoelectric conversion parts 9A-9D. The photoelectric conversion parts 9A-9D each includes a substrate 16 having a surface 16a and a rear face 16b, an optical waveguide part 17, a light-receiving part 18, a capacitative element part 19, a bias voltage-side electrode pad 21 and a via electrode 22 to which reference potential is applied. The capacitative element part 19 includes a lower metal layer 34 electrically connected to the light-receiving element part 18 and the bias voltage-side electrode pad 21, an upper metal layer 52 electrically connected to the via electrode 22, and an insulation layer 33 arranged between the lower metal layer 34 and the upper metal layer 52. |
