| 摘要 |
PROBLEM TO BE SOLVED: To provide a GaO-based single crystal substrate comprising a GaO-based single crystal, and having a heightened resistance, while suppressing deterioration of a crystal quality.SOLUTION: In one embodiment, a GaO-based single crystal substrate comprises a GaO-based single crystal containing a donor impurity and Fe, and has a higher concentration of Fe than a concentration of the donor impurity. In the GaO-based single crystal substrate, the concentration of Fe is 1.5×10cmor lower. |
