DAMASCENE CONDUCTOR FOR A 3D DEVICE

摘要

A method of forming a conductor structure can result in vertical sidewalls. The method deposits a lining over a plurality of spaced-apart stacks of active layers. An isolation material is formed over the lining, over and in between the spaced-apart stacks. A plurality of trenches in the isolation material is arranged to cross over the plurality of spaced-apart stacks of active strips, leaving at least a residue of the lining on a bottom of the trenches between the stacks of active strips and over a sidewall of the spaced-apart stacks of active strips. The residue of the lining on the bottom of the trenches and the sidewalls of the spaced-apart stacks of active layers is selectively removed. Then the plurality of trenches is filled with conductive or semiconductor material to form the damascene structure.

主权项

1. A method of forming conductors in a 3D circuit; comprising:
providing a substrate having a plurality of spaced-apart stacks of active strips; depositing a lining over the plurality of spaced-apart stacks of active strips;depositing an insulating fill material over the lining, over and in between the spaced-apart stacks;
using a first etch process, forming a plurality of trenches in the insulating fill material arranged to cross over the plurality of spaced-apart stacks; using a second etch process, removing the lining exposed within the trenches; and filling the plurality of trenches with a conductor or semiconductor material to form damascene conductor structures.