Interconnection Structure And Method For Semiconductor Device

摘要

A semiconductor device is disclosed. The device includes a substrate, a first dielectric layer disposed over the substrate and a metal structure disposed in the first dielectric layer and below a surface of the first dielectric layer. The metal structure has a such shape that having an upper portion with a first width and a lower portion with a second width. The second width is substantially larger than the first width. The semiconductor device also includes a sub-structure of a second dielectric positioned between the upper portion of the metal structure and the first dielectric layer.

主权项

1. A semiconductor device comprising:
a substrate; a first dielectric layer disposed over the substrate; a metal structure disposed in the first dielectric layer and below a surface of the first dielectric layer, the metal structure having a shape that includes:
an upper portion with a first width; anda lower portion with a second width, which is substantially larger than the first width, whereby a notch is formed in the metal structure; and a second dielectric sub-structure positioned in the notch between the upper portion of the metal structure and the first dielectric layer.