发明名称 Resistor and Metal-Insulator-Metal Capacitor Structure and Method
摘要 A passive circuit device incorporating a resistor and a capacitor and a method of forming the circuit device are disclosed. In an exemplary embodiment, the circuit device comprises a substrate and a passive device disposed on the substrate. The passive device includes a bottom plate disposed over the substrate, a top plate disposed over the bottom plate, a spacing dielectric disposed between the bottom plate and the top plate, a first contact and a second contact electrically coupled to the top plate, and a third contact electrically coupled to the bottom plate. The passive device is configured to provide a target capacitance and a first target resistance. The passive device may also include a second top plate disposed over the bottom plate and configured to provide a second target resistance, such that the second target resistance is different from the first target resistance.
申请公布号 US2014264750(A1) 申请公布日期 2014.09.18
申请号 US201313797315 申请日期 2013.03.12
申请人 Ltd. Taiwan Semiconductor Manufacturing Company 发明人 Chang Chih-Fu;Wang Jen-Pan
分类号 H01L27/06 主分类号 H01L27/06
代理机构 代理人
主权项 1. An integrated circuit device comprising: a substrate; and a passive device disposed on the substrate, the passive device including: a bottom plate disposed over the substrate;a top plate disposed over the bottom plate;a spacing dielectric disposed between the bottom plate and the top plate;a first contact and a second contact electrically coupled to the top plate; anda third contact electrically coupled to the bottom plate; wherein the passive device is configured to provide a target capacitance and a target resistance.
地址 US