MAGNETIC MEMORY ELEMENT

摘要

A magnetic memory element includes a memory layer having magnetic anisotropy on the film surface thereof in the perpendicular direction and in which the magnetization direction is variable, a reference layer having magnetic anisotropy on the film surface thereof in the perpendicular direction and in which the magnetization direction is not variable, and a tunnel barrier layer which is interposed between the memory layer and the reference layer. The memory layer is made of an alloy including cobalt (Co) andiron (Fe). A plurality of oxygen atoms are present on both interfaces of the memory layer.

主权项

1. A magnetic memory element comprising:
a memory layer having magnetic anisotropy on a film surface thereof in a perpendicular direction and in which a magnetization direction is variable; a reference layer having magnetic anisotropy on the film surface thereof in the perpendicular direction and in which the magnetization direction is fixed; and a tunnel barrier layer interposed between the memory layer and the reference layer, wherein the memory layer is made of an alloy including cobalt (Co) and iron (Fe), and wherein a plurality of oxygen atoms are present in an interface between the tunnel barrier layer and the memory layer, and on a surface of the memory layer opposite to the tunnel barrier layer.