NONVOLATILE MEMORY CELLS AND METHODS OF MAKING SUCH CELLS

摘要

A memory cell can include at least a first programmable section coupled between a supply node and a first data node; a volatile storage circuit coupled to the first data node; and the programmable section includes a programmable transistor having a first source/drain (S/D) region shared with a first transistor, and a second S/D region shared with a second transistor; wherein the first S/D region has a different dopant diffusion profile than the second S/D region, and the programmable transistor has a charge storage structure formed between its control gate and its channel. Methods of forming such a memory cell are also disclosed.

主权项

1. A memory cell, comprising:
at least a first programmable section coupled between a first supply node and a first data node; a volatile storage circuit coupled to the first data node; and the programmable section includes a programmable transistor having a first source/drain (S/D) region shared with a first access transistor, and a second S/D region shared with a second access transistor; wherein the first S/D region has a different dopant diffusion profile than the second S/D region and a more graded dopant p-n junction than the second S/D region, and includes a first S/D region contained by a grade increasing region of the same conductivity type as the first S/D region and the programmable transistor has a charge storage structure formed between its control gate and its channel.