发明名称 |
TRACK PROCESSING TO REMOVE ORGANIC FILMS IN DIRECTED SELF-ASSEMBLY CHEMO-EPITAXY APPLICATIONS |
摘要 |
A method is provided for preparing a prepatterned substrate for use in DSA integration. In one example, the method includes removing a radiation-sensitive material pattern overlying a patterned cross-linked polystyrene copolymer layer by a) exposure to a solvent vapor, b) exposure to a liquid solvent, and c) repeating steps a)-b) until the radiation-sensitive material pattern is completely removed. In another example, the method includes removing a neutral layer by affecting removal of an underlying patterned radiation-sensitive material layer, which includes swelling the neutral layer; and removing the radiation-sensitive material pattern and the swollen neutral layer in portions by exposing the swollen layer and pattern to a developer solution. Swelling the neutral layer includes a) exposure to a solvent vapor; b) exposure to a liquid solvent; and c) repeating steps a)-b) until the neutral layer is sufficiently swollen to allow penetration of the developing solution through the swollen neutral layer. |
申请公布号 |
US2014273472(A1) |
申请公布日期 |
2014.09.18 |
申请号 |
US201414208160 |
申请日期 |
2014.03.13 |
申请人 |
Tokyo Electron Limited |
发明人 |
Somervell Mark H.;Hetzer David;Huli Lior |
分类号 |
H01L21/311 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
1. A method for forming a prepattern, comprising:
providing a substrate with a radiation-sensitive material pattern overlying a patterned cross-linked polystyrene copolymer layer; and removing the radiation-sensitive material pattern overlying the patterned cross-linked polystyrene copolymer layer, wherein the step of removing the radiation-sensitive material pattern overlying the patterned cross-linked polystyrene copolymer layer comprises: a) exposing the radiation-sensitive material pattern to a solvent vapor; b) exposing the radiation-sensitive material pattern to a liquid solvent; c) repeating steps a)-b) until the radiation-sensitive material pattern is completely removed. |
地址 |
Tokyo JP |