OPERATION FOR NON-VOLATILE STORAGE SYSTEM WITH SHARED BIT LINES

摘要

A non-volatile storage system is disclosed that includes pairs of NAND strings (or other groupings of memory cells) in the same block being connected to and sharing a common bit line. To operate the system, two selection lines are used so that the NAND strings (or other groupings of memory cells) sharing a bit line can be selected at the block level. Both selection lines are connected to a selection gate for each of the NAND strings (or other groupings of memory cells) sharing the bit line. One set of embodiments avoid unwanted boosting during read operations by keeping the channels of the memory cells connected to word lines on the drain side of the selected word line biased at a fixed potential.

主权项

1. A method of reading three dimensional non-volatile storage, comprising:
electrically selecting one group of non-volatile storage elements for each bit line of a plurality of bit lines in a system that includes multiple groups of non-volatile storage elements in a common block being connected to each bit line of the plurality of bit lines, each group of non-volatile storage elements comprises multiple connected non-volatile storage elements the multiple groups of non-volatile storage elements are part of a three dimensional memory structure, the non-volatile storage elements of the multiple groups of non-volatile storage elements have active areas disposed over a silicon substrate; applying an unselected voltage to unselected word lines; maintaining, at a first fixed potential, channels of non-volatile storage elements that are connected to word lines on a drain side of a selected word line and that are in unselected groups of non-volatile storage elements; and applying a read compare voltage to the selected word line and sensing non-volatile storage elements connected to the selected word line and that are in selected groups of non-volatile storage elements; the selecting, applying the unselected voltage, maintaining and applying the read compare voltage are performed at the direction of managing circuitry that operates the system.