CROSS POINT ARRAY MRAM HAVING SPIN HALL MTJ DEVICES

摘要

Cross point array magnetoresistive random access memory (MRAM) implementing spin hall magnetic tunnel junction (MTJ)-based devices and methods of operation of such arrays are described. For example, a bit cell for a non-volatile memory includes a magnetic tunnel junction (MTJ) stack disposed above a substrate and having a free magnetic layer disposed above a dielectric layer disposed above a fixed magnetic layer. The bit cell also includes a spin hall metal electrode disposed above the free magnetic layer of the MTJ stack.

主权项

1. A bit cell for a non-volatile memory, the bit cell, comprising:
a magnetic tunnel junction (MTJ) stack disposed above a substrate and comprising a free magnetic layer disposed above a dielectric layer disposed above a fixed magnetic layer; and a spin hall metal electrode disposed above the free magnetic layer of the MTJ stack.