Write-Assisted Memory with Enhanced Speed

摘要

A write-assisted memory includes a pre-charge assist circuit that assists the pre-charge of the power supply voltage on a power supply lead for an accessed memory cell in a bit-line-multiplexed group of memory cells subsequent to a write-assist period by coupling charge from the power supply leads for the remaining non-accessed memory cells in the bit-line-multiplexed group of memory cells.

主权项

1. A memory, comprising:
a bit-line multiplexed plurality of memory cells configured such that while a memory cell in the plurality is accessed by being written to in a write-assisted write operation, a remainder of the memory cells in the bit-line multiplexed plurality are non-accessed memory cells; and a pre-charge assist circuit configured to assist in a pre-charge of a power supply voltage for an accessed one of the memory cells to a default value upon completion of a write-assist period by coupling charge from power supply leads for the non-accessed memory cells.