| 主权项 |
1. A semiconductor storage device, comprising:
a plurality of memory cells that each comprise a variable resistance element; a plurality of first wires and a plurality of second wires, wherein each memory cell is disposed between and electrically coupled to one of the plurality of first wires and one of the plurality of second wires, and each first wire is electrically coupled to two or more memory cells and each second wire is electrically coupled to two or more memory cells; a control circuit that controls the voltage applied to the memory cells, wherein the control circuit is configured to apply a reset voltage of a first polarity to a first memory cell, which is connected to a selected first wire of the plurality of first wires and a selected second wire of the plurality of second wires, the control circuit is further configured to
apply a cancel voltage of a second polarity opposite to the first polarity to a second memory cell, wherein the second memory cell is applied a certain voltage when the reset voltage is applied to the first memory cell and the absolute value of the certain voltage is less than the absolute value of the reset voltage, andat the same time, applying a readout voltage of the second polarity to the first memory cell, andthe cancel voltage and the readout voltage have the same voltage value. |
