发明名称 INTEGRATED ANTENNA STRUCTURE AND ARRAY
摘要 Some embodiments relate to a semiconductor module having an integrated antenna structure that wirelessly transmits signals. The semiconductor module has a first die having a first far-back-end-of-the-line (FBEOL) metal layer with a ground plane connected to a ground terminal. A second die is stacked onto the first die and has a second FBEOL metal layer with an antenna exciting element that extends to a position that is vertically over the ground plane. One or more micro-bumps are vertically located between the first FBEOL metal layer and the second FBEOL metal layer. The one or more micro-bumps provide a radio frequency (RF) signal between the first FBEOL metal layer and the antenna exciting element of the second FBEOL metal layer. By using micro-bumps to connect the first and second die, the FBEOL metal layers are separated by a large spacing that provides for good performance of the integrated antenna structure.
申请公布号 US2014266919(A1) 申请公布日期 2014.09.18
申请号 US201414287338 申请日期 2014.05.27
申请人 Taiwan Semiconductor Manufacturing Co., Ltd. 发明人 Chen Ho-Hsiang
分类号 H01Q1/38 主分类号 H01Q1/38
代理机构 代理人
主权项 1. A semiconductor module comprising an integrated antenna structure, comprising: a first die having a first far-back-end-of-the-line (FBEOL) metal layer comprising a ground plane connected to a ground terminal; a second die stacked onto the first die and having a second FBEOL metal layer comprising an antenna exciting element that extends to a position that is vertically over the ground plane; and one or more micro-bumps vertically disposed between the first FBEOL metal layer and the second FBEOL metal layer, wherein one or more micro-bumps are configured to provide a radio frequency (RF) signal between the first FBEOL metal layer and the antenna exciting element of the second FBEOL metal layer.
地址 Hsin-Chu TW