发明名称 |
INTEGRATED ANTENNA STRUCTURE AND ARRAY |
摘要 |
Some embodiments relate to a semiconductor module having an integrated antenna structure that wirelessly transmits signals. The semiconductor module has a first die having a first far-back-end-of-the-line (FBEOL) metal layer with a ground plane connected to a ground terminal. A second die is stacked onto the first die and has a second FBEOL metal layer with an antenna exciting element that extends to a position that is vertically over the ground plane. One or more micro-bumps are vertically located between the first FBEOL metal layer and the second FBEOL metal layer. The one or more micro-bumps provide a radio frequency (RF) signal between the first FBEOL metal layer and the antenna exciting element of the second FBEOL metal layer. By using micro-bumps to connect the first and second die, the FBEOL metal layers are separated by a large spacing that provides for good performance of the integrated antenna structure. |
申请公布号 |
US2014266919(A1) |
申请公布日期 |
2014.09.18 |
申请号 |
US201414287338 |
申请日期 |
2014.05.27 |
申请人 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
发明人 |
Chen Ho-Hsiang |
分类号 |
H01Q1/38 |
主分类号 |
H01Q1/38 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor module comprising an integrated antenna structure, comprising:
a first die having a first far-back-end-of-the-line (FBEOL) metal layer comprising a ground plane connected to a ground terminal; a second die stacked onto the first die and having a second FBEOL metal layer comprising an antenna exciting element that extends to a position that is vertically over the ground plane; and one or more micro-bumps vertically disposed between the first FBEOL metal layer and the second FBEOL metal layer, wherein one or more micro-bumps are configured to provide a radio frequency (RF) signal between the first FBEOL metal layer and the antenna exciting element of the second FBEOL metal layer. |
地址 |
Hsin-Chu TW |