| 发明名称 |
SELF ALIGNED CAPACITOR FABRICATION |
| 摘要 |
A capacitor and method for fabricating the same. In one configuration, the capacitor has a silicon substrate, a first and a second silicon dioxide layer over the silicon substrate, and silicon nitride fins between the silicon dioxide layers. The capacitor further includes a dielectric layer over the silicon nitride fins and metal vias in the dielectric layer. |
| 申请公布号 |
US2014264746(A1) |
申请公布日期 |
2014.09.18 |
| 申请号 |
US201314037334 |
申请日期 |
2013.09.25 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Cheng Kangguo;Doris Bruce B.;Hashemi Pouya;Khakifirooz Ali;Reznicek Alexander |
| 分类号 |
H01L49/02 |
主分类号 |
H01L49/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A capacitor comprising:
a silicon substrate; a first silicon dioxide layer over the silicon substrate; a silicon nitride fin over the first silicon dioxide layer; and a dielectric layer over the silicon nitride fin. |
| 地址 |
Armonk NY US |
