| 发明名称 |
Metal-Oxide-Semiconductor Field-Effect Transistor with Metal-Insulator Semiconductor Contact Structure to Reduce Schottky Barrier |
| 摘要 |
A method includes depositing a first metal layer on a native SiO2 layer that is disposed on at least one of a source and a drain of a metal-oxide-semiconductor field-effect transistor (MOSFET). A metal oxide layer is formed from the native SiO2 layer and the first metal layer, wherein the remaining first metal layer, the metal oxide layer, and the at least one of the source and the drain form a metal-insulator-semiconductor (MIS) contact. |
| 申请公布号 |
US2014264494(A1) |
申请公布日期 |
2014.09.18 |
| 申请号 |
US201313902551 |
申请日期 |
2013.05.24 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Xu Jeffrey Junhao |
| 分类号 |
H01L29/66;H01L29/78 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method, comprising:
depositing a first metal layer on a native SiO2 layer that is disposed on at least one of a source and a drain of a metal-oxide-semiconductor field-effect transistor (MOSFET); and forming a metal oxide layer from the native SiO2 layer and a part of the first metal layer, wherein the remaining part of the first metal layer, the metal oxide layer, and the at least one of the source and the drain form a metal-insulator-semiconductor (MIS) contact. |
| 地址 |
Hsin-Chu TW |
