| 发明名称 |
High Mobility Transport Layer Structures for Rhombohedral Si/Ge/SiGe Devices |
| 摘要 |
An electronic device includes a trigonal crystal substrate defining a (0001) C-plane. The substrate may comprise Sapphire or other suitable material. A plurality of rhomhohedrally aligned SiGe (111)-oriented crystals are disposed on the (0001) C-plane of the crystal substrate. A first region of material is disposed on the rhombohedrally aligned SiGe layer. The first region comprises an intrinsic or doped Si, Ge, or SiGe layer. The first region can be layered between two secondary regions comprising n+doped SiGe or n+doped Ge, whereby the first region collects electrons from the two secondary regions. |
| 申请公布号 |
US2014264459(A1) |
申请公布日期 |
2014.09.18 |
| 申请号 |
US201414202699 |
申请日期 |
2014.03.10 |
| 申请人 |
U.S.A. as represented by the National Aeronautics and Space Administration |
发明人 |
Choi Sang Hyouk;Park Yeonjoon;King Glen C.;Kim Hyun-Jung;Lee Kunik |
| 分类号 |
H01L29/04;H01L29/165;H01L21/02 |
主分类号 |
H01L29/04 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An electronic device, comprising:
a trigonal crystal substrate defining a (0001) C-plane; a plurality of rhombohedrally aligned (111)-oriented crystals disposed on the (0001) C-plane of the crystal substrate, wherein the plurality of rhombohedrally aligned (111)-oriented crystals comprise a material selected from the group consisting of group IV semiconductors and alloys of group IV semiconductors; a first region disposed on the rhombohedrally aligned SiGe layer, the first region comprising an intrinsic or doped thin Si, Ge, or SiGe layer. |
| 地址 |
Washington DC US |
