| 主权项 |
1. A light-receiving and emitting device, comprising:
an integrated light-receiving and emitting element in which a light-receiving element and a light-emitting element are disposed on one principal surface of a substrate, wherein the substrate is formed of a one conductivity type semiconductor, at least one electrode layer is disposed in at least a region corresponding to the light-receiving element and the light-emitting element on the other principal surface of the substrate, the light-receiving element comprises a first other conductivity type semiconductor layer on a side of the one principal surface of the substrate, a first anode on the upper surface of the first other conductivity type semiconductor layer, and a first cathode on the upper surface of the one principal surface of the substrate, an operational amplifier in which an inverting input terminal is connected to the first anode and a non-inverting input terminal is connected to the first cathode and the electrode layer is further comprised, and the electrode layer, the first anode, and the first cathode are at the same potential. |
