| 发明名称 |
STRUCTURE AND MANUFACTURING METHOD OF THE STRUCTURE, AND GALLIUM NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE USING THE STRUCTURE AND MANUFACTURING METHOD OF THE DEVICE |
| 摘要 |
In a structure including a gallium nitride-based semiconductor having an m-plane as a principal plane, and a metal layer provided on the principal plane, the principal plane has an n-type conductivity. An interface between the gallium nitride-based semiconductor and the metal layer contains oxygen. The metal layer includes a crystal grain extending form a lower surface to an upper surface of the metal layer. |
| 申请公布号 |
US2014264372(A1) |
申请公布日期 |
2014.09.18 |
| 申请号 |
US201414290311 |
申请日期 |
2014.05.29 |
| 申请人 |
Panasonic Corporation |
发明人 |
FUJIKANE Masaki;INOUE Akira;YOKOGAWA Toshiya |
| 分类号 |
H01L29/20;H01L21/02;H01L33/32 |
主分类号 |
H01L29/20 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A structure, comprising:
a gallium nitride-based semiconductor layer having an m-plane as a principal plane; and a silver layer provided on the principal plane, wherein the principal plane has an n-type conductivity, an interface between the gallium nitride-based semiconductor layer and the silver layer contains oxygen, and the silver layer includes a crystal grain extending from a lower surface to an upper surface of the silver layer. |
| 地址 |
Osaka JP |
