| 发明名称 |
III-NITRIDE TRANSISTOR WITH ENGINEERED SUBSTRATE |
| 摘要 |
A transistor includes a buffer layer, a channel layer over the buffer layer, a barrier layer over the channel layer, a source electrode electrically connected to the channel layer, a drain electrode electrically connected to the channel layer, a gate electrode on the barrier layer between the source electrode and the drain electrode, a backside metal layer, a substrate between a first portion of the buffer layer and the backside metal layer; and a dielectric between a second portion of the buffer layer and the backside metal layer. |
| 申请公布号 |
US2014264361(A1) |
申请公布日期 |
2014.09.18 |
| 申请号 |
US201313838546 |
申请日期 |
2013.03.15 |
| 申请人 |
HRL LABORATORIES, LLC |
发明人 |
Chu Rongming;Li Zijan Ray;Boutros Karim |
| 分类号 |
H01L29/786;H01L29/66;H01L29/205 |
主分类号 |
H01L29/786 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A transistor comprising:
a buffer layer; a channel layer over the buffer layer; a barrier layer over the channel layer; a source electrode electrically connected to the channel layer; a drain electrode electrically connected to the channel layer; a gate electrode on the barrier layer between the source electrode and the drain electrode; a backside metal layer; a substrate between a first portion of the buffer layer and the backside metal layer; and a dielectric between a second portion of the buffer layer and the backside metal layer. |
| 地址 |
Malibu CA US |
