TRANSISTOR WITH CHARGE ENHANCED FIELD PLATE STRUCTURE AND METHOD

摘要

Transistors and methods of fabricating are described herein. These transistors include a field plate (108) and a charged dielectric layer (106) overlapping at least a portion of a gate electrode (102). The field plate (108) and charged dielectric layer (106) provide the ability to modulate the electric field or capacitance in the transistor. For example, the charged dielectric layer (106) provides the ability to control the capacitance between the gate electrode (102) and field plate (108). Modulating such capacitances or the electric field in transistors can facilitate improved performance. For example, controlling gate electrode (102) to field plate (108) capacitance can be used to improve device linearity and/or breakdown voltage. Such control over gate electrode (102) to field plate (108) capacitance or electric fields provides for high speed and/or high voltage transistor operation.

主权项

1. A method of forming a transistor, comprising:
providing a substrate; forming a conductive gate electrode with a contact base portion in contact with a gate contact surface of the substrate; forming drain and source electrodes spaced apart from the conductive gate electrode and in contact with the substrate; forming a first dielectric layer over the gate, drain, and source electrodes; forming a charged dielectric layer over at least a portion of the first dielectric layer, the charged dielectric layer overlapping at least a portion of the gate; and forming a field plate overlapping at least a portion of the charged dielectric layer.