NONVOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A nonvolatile memory device includes a plurality of nonvolatile memory elements each having an upper electrode, a variable resistance layer, and a lower electrode; a first insulating layer embedding the plurality of nonvolatile memory elements, and ranging from a lowermost part of the lower electrode to a position higher than an uppermost part of the upper electrode in each of the nonvolatile memory elements; a second insulating layer being formed on the first insulating layer, and having an average size of vacancies larger than an average size of vacancies included in the first insulating layer, or having an average carbon concentration higher than an average carbon concentration of the first insulating layer; and a conductive layer penetrating the second insulating layer and a part of the first insulating layer and being connected to at least one of the upper electrodes included in the nonvolatile memory elements.

主权项

1. A nonvolatile memory device comprising:
a plurality of nonvolatile memory elements each having an upper electrode, a lower electrode, and a variable resistance layer disposed between the lower electrode and the upper electrode, the variable resistance layer having a resistance value that reversibly changes according to an electrical signal applied to the variable resistance layer; a first insulating layer embedding the plurality of the nonvolatile memory elements, and ranging from a lowermost part of the lower electrode to a position higher than an uppermost part of the upper electrode in each of the nonvolatile memory elements; a second insulating layer formed on the first insulating layer, and having an average size of vacancies larger than an average size of vacancies included in the first insulating layer, or having an average carbon concentration higher than an average carbon concentration of the first insulating layer; and a conductive layer penetrating the second insulating layer and a part of the first insulating layer and being connected to at least one of the upper electrodes of the nonvolatile memory elements.