SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME

摘要

In a method of manufacturing a semiconductor device, a split gate structure is formed on a cell region of a substrate including the cell region and a logic region. The logic region has a high voltage region, an ultra high voltage region and a low voltage region, and the split gate structure includes a first gate insulation layer pattern, a floating gate, a tunnel insulation layer pattern and a control gate. A spacer layer is formed on the split gate structure and the substrate. The spacer layer is etched to form a spacer on a sidewall of the split gate structure and a second gate insulation layer pattern on the ultra high voltage region of the substrate. A gate electrode is formed on each of the high voltage region of the substrate, the second gate insulation layer pattern, and the low voltage region of the substrate.

主权项

1. A method of manufacturing a semiconductor device, comprising:
forming a split gate structure on a cell region of a substrate, the substrate including the cell region in which memory cells are formed and a logic region in which logic elements are formed, the logic region having a high voltage region, an ultra high voltage region and a low voltage region, and the split gate structure including a first gate insulation layer pattern, a floating gate, a tunnel insulation layer pattern and a control gate; forming a spacer layer on the split gate structure and the substrate; etching the spacer layer to form a spacer and a second gate insulation layer pattern, the spacer being formed on a sidewall of the split gate structure and the second gate insulation layer pattern being formed on the ultra high voltage region of the substrate; and forming a gate electrode on the high voltage region, the second gate insulation layer pattern, and the low voltage region.