| 发明名称 |
Methods for Measuring the Full Well Capacity of CMOS Image Sensors |
| 摘要 |
An integrated circuit device includes a transfer-gate transistor, and a photo diode connected to a source/drain region of the transfer-gate transistor. An electrical fuse is electrically coupled to a gate of the transfer-gate transistor. A diode is electrically coupled to the electrical fuse. |
| 申请公布号 |
US2014264505(A1) |
申请公布日期 |
2014.09.18 |
| 申请号 |
US201313892092 |
申请日期 |
2013.05.10 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Chiu Kai-Ling;Lu Tse-Hua;Cheng Yu-Kuo;Chiu Po-Chun;Hung Ping-Fang |
| 分类号 |
H01L27/146;H01L21/66 |
主分类号 |
H01L27/146 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An integrated circuit device comprising:
a transfer-gate transistor; a photo diode connected to a first source/drain region of the transfer-gate transistor; an electrical fuse electrically coupled to a gate of the transfer-gate transistor; and a diode electrically coupled to the electrical fuse. |
| 地址 |
Hsin-Chu TW |
