COUNTER-DOPED LOW-POWER FINFET

摘要

FinFETs and methods for making FinFETs are disclosed. A fin is formed on a substrate, wherein the fin has a height greater than 2 to 6 times of its width, a length defining a channel between source and drain ends, and the fin comprises a lightly doped semiconductor. A conformally doped region of counter-doped semiconductor is formed on the fin using methods such as monolayer doping, sacrificial oxide doping, or low energy plasma doping. Halo-doped regions are formed by angled ion implantation. The halo-doped regions are disposed in the lower portion of the source and drain and adjacent to the fin. Energy band barrier regions can be formed at the edges of the halo-doped regions by angled ion implantation.

主权项

1. A method of making a FinFET comprising
forming a fin on a substrate, wherein the fin has a height between 2 and 6 times its width, wherein the fin has a length defining a channel between source and drain ends, and wherein the fin comprises a lightly doped bulk semiconductor, forming a conformal region of counter-doped semiconductor in the fin surface at a dopant concentration approximately equal to that of the lightly doped bulk semiconductor, and forming halo-doped regions by angled ion implantation, wherein the halo-doped regions are located adjacent to the source and drain ends of the fin in semiconductor material used for source and drain connections and adjacent to a half of the fin closest to the substrate.