| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME, POWER SUPPLY DEVICE, AND HIGH-FREQUENCY AMPLIFIER |
| 摘要 |
A semiconductor device includes: a nitride semiconductor multilayer; an insulating film disposed on the nitride semiconductor multilayer; and a gate electrode disposed on the insulating film, wherein the nitride semiconductor multilayer has a first oxidized region near an interface with a region of the insulating film below the gate electrode, the first oxidized region having an oxygen concentration higher than an oxygen concentration of a region near an interface with a region of the insulating film other than below the gate electrode. |
| 申请公布号 |
US2014264451(A1) |
申请公布日期 |
2014.09.18 |
| 申请号 |
US201414167216 |
申请日期 |
2014.01.29 |
| 申请人 |
FUJITSU LIMITED |
发明人 |
OZAKI Shirou;OKAMOTO NAOYA |
| 分类号 |
H01L29/778;H03F3/16;H02M3/335;H01L29/66 |
主分类号 |
H01L29/778 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a nitride semiconductor multilayer; an insulating film disposed on the nitride semiconductor multilayer; and a gate electrode disposed on the insulating film, wherein the nitride semiconductor multilayer has a first oxidized region near an interface with a region of the insulating film below the gate electrode, the first oxidized region having an oxygen concentration higher than an oxygen concentration of a region near an interface with a region of the insulating film other than below the gate electrode. |
| 地址 |
Kawasaki-shi JP |
