HETEROGENEOUS LAYERED STRUCTURE, METHOD OF PREPARING THE HETEROGENEOUS LAYERED STRUCTURE, AND ELECTRONIC DEVICE INCLUDING THE HETEROGENEOUS LAYERED STRUCTURE

摘要

A method of manufacturing a heterogeneous layered structure includes growing a hexagonal boron nitride sheet directly on a metal substrate in a chamber, increasing a temperature of the chamber to about 300° C. to about 1500° C., and forming a graphene sheet on the hexagonal boron nitride sheet by supplying a carbon source into the chamber while thermally treating the hexagonal boron nitride sheet at the increased temperature.

主权项

1. A heterogeneous layered structure comprising:
a hexagonal boron nitride sheet; and a graphene sheet on the hexagonal boron nitride sheet, wherein the heterogeneous layered structure leads to a Dirac point shift of about 0 V to about 10 V in a plot of resistance (R) versus gate voltage (Vg) in an electronic device.