MULTIPLE-PATTERNED SEMICONDUCTOR DEVICE CHANNELS

摘要

A semiconductor device and method of manufacture are provided. The semiconductor device may include a multiple-patterned layer which may include multiple channels defined by multiple masks. A width of a first channel may be smaller than a width of a second channel. A conductor in the first channel may have a conductor width substantially equivalent to a conductor width of a conductor in the second channel. A spacer dielectric on a channel side may be included. The method of manufacture includes establishing a signal conductor layer including channels defined masks where a first channel may have a first width smaller than a second width of a second channel, introducing a spacer dielectric on a channel side, introducing a first conductor in the first channel having a first conductor width, and introducing a second conductor in the second channel having a second conductor width substantially equivalent to the first conductor width.

主权项

1. A method of manufacturing a semiconductor device, comprising:
establishing a signal conductor layer having a first channel defined by a first mask and a second channel defined by a second mask, the first channel having a first width and the second channel having a second width, the first width smaller than the second width; introducing a spacer dielectric on a side of the second channel; introducing a first conductor in the first channel having a first conductor width; and introducing a second conductor in the second channel having a second conductor width, the first conductor width substantially equivalent to the second conductor width.