| 发明名称 |
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE |
| 摘要 |
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a transistor region and a resistor region; forming a shallow trench isolation (STI) on the resistor region of the substrate; forming a tank in the STI; and forming a resistor in the tank and on two sides of the top surface of the STI outside the tank. |
| 申请公布号 |
US2014273371(A1) |
申请公布日期 |
2014.09.18 |
| 申请号 |
US201414294152 |
申请日期 |
2014.06.03 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Hsu Chun-Wei;Huang Po-Cheng;Huang Ren-Peng;Yang Jie-Ning;Hsu Chia-Lin;Tsai Teng-Chun;Lin Chih-Hsun;Kung Chang-Hung;Chen Yen-Ming;Li Yu-Ting |
| 分类号 |
H01L27/06 |
主分类号 |
H01L27/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for fabricating semiconductor device, comprising:
providing a substrate having a transistor region and a resistor region; forming a shallow trench isolation (STI) on the resistor region of the substrate; forming a tank in the STI; and forming a resistor in the tank and on two sides of the top surfaceof the STI outside the tank. |
| 地址 |
Hsin-Chu City TW |
