| 主权项 |
1. A method for programming a non-volatile memory system, the non-volatile memory system includes a first set of word lines, the first set of word lines include a first word line, a second word line and a third word line, the non-volatile memory system capable of storing first data, second data and third data, the method comprising:
loading the second data into a first latch for the non-volatile memory system; storing the first data in a third latch for the non-volatile memory system, the first data has already been programmed into a plurality of non-volatile storage elements connected to the first word line; moving the second data from the first latch to a second latch for the non-volatile memory system; programming the second data from into a plurality of non-volatile storage elements connected to the second word line; loading the third data into the first latch for programming the third data into a plurality of non-volatile storage elements connected to the third word line; determining whether the second data is correctly stored in the non-volatile storage elements connected to the second word line; and if the second data is not correctly stored in the non-volatile storage elements connected to the second word line, then:
accessing the first data from the third latch and programming the accessed first data into non-volatile storage elements connected one or more word lines of a second set of word lines that are different than the first set of word lines,accessing the second data from the second latch and programming the accessed second data into non-volatile storage elements connected one or more word lines of the second set of word lines, andaccessing the third data from the first latch and programming the access third data into non-volatile storage elements connected one or more word lines of the second set of word lines. |
