发明名称 |
SYNTHESIS OF SILICON CONTAINING MATERIALS USING LIQUID HYDROSILANE COMPOSITIONS THROUGH DIRECT INJECTION |
摘要 |
An apparatus and a non-vapor-pressure dependent method of chemical vapor deposition of Si based materials using direct injection of liquid hydrosilane(s) are presented. Liquid silane precursor solutions may also include metal, non-metal or metalloid dopants, nanomaterials and solvents. An illustrative apparatus has a precursor solution and carrier gas system, atomizer and deposit head with interior chamber and a hot plate supporting the substrate. Atomized liquid silane precursor solutions and carrier gas moves through a confined reaction zone that may be heated and the aerosol and vapor are deposited on a substrate to form a thin film. The substrate may be heated prior to deposition. The deposited film may be processed further with thermal or laser processing. |
申请公布号 |
WO2014144862(A2) |
申请公布日期 |
2014.09.18 |
申请号 |
WO2014US29451 |
申请日期 |
2014.03.14 |
申请人 |
NDSU RESEARCH FOUNDATION |
发明人 |
SRINIVASAN, GURUVENKET;SAILER, ROBERT;HOEY, JUSTIN |
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