| 摘要 |
To provide a method for manufacturing a semiconductor device, which uses a method for bonding a supporting substrate to a semiconductor wafer that is applicable to a high-temperature process at around 1,000°C. A method for manufacturing a semiconductor device, which comprises at least: a back surface bonding step wherein a supporting substrate is bonded to the back surface of a semiconductor wafer, with a ceramic adhesive layer and a mask being interposed therebetween, so as to obtain a bonded body; a functional structure forming step wherein a functional structure is formed on the front surface of the semiconductor wafer; a separation step wherein the ceramic adhesive layer and the mask are removed, so that the supporting substrate is separated from the semiconductor wafer; and a back surface processing step wherein the back surface of the semiconductor wafer is subjected to back surface processing. |
