发明名称 |
PRECURSOR COMPOSITION FOR DEPOSITION OF SILICON DIOXIDE FILM AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE USING THE SAME |
摘要 |
A precursor composition for forming a silicon dioxide film on a substrate, the precursor composition including at least one precursor compound represented by the following chemical formulas (1), (2), and (3):;HxSiAy(NR1R2)4-x-y (1);HxSi(NAR3)4-x (2);HxSi(R4)z(R5)4-x-z (3);wherein, independently in the chemical formulas (1), (2), and (3), H is hydrogen, x is 0 to 3, Si is silicon, A is a halogen, y is 1 to 4, N is nitrogen, and R1, R2, R3, and R5 are each independently selected from the group of H, aryl, perhaloaryl, C1-8 alkyl, and C1-8 perhaloalkyl, and R4 is aryl in which at least one hydrogen is replaced with a halogen or C1-8 alkyl in which at least one hydrogen is replaced with a halogen |
申请公布号 |
US2014264778(A1) |
申请公布日期 |
2014.09.18 |
申请号 |
US201414180907 |
申请日期 |
2014.02.14 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LIM Han-Jin;KIM Bong-Hyun;NAM Seok-Woo;SHIN Dong-Woon;JEON In-Sang;HONG Soo-Jin |
分类号 |
C07F7/12;H01L23/00;H01L21/28 |
主分类号 |
C07F7/12 |
代理机构 |
|
代理人 |
|
主权项 |
1. A precursor composition for forming a silicon dioxide film on a substrate, the precursor composition including at least one precursor compound represented by the following chemical formulas (1), (2), and (3):
HxSiAy(NR1R2)4-x-y (1) HxSi(NAR3)4-x (2) HxSi(R4)z(R5)4-x-z (3) wherein, independently in the chemical formulas (1), (2), and (3), H is hydrogen, x is 0 to 3, Si is silicon, A is a halogen, y is 1 to 4, N is nitrogen, and R1, R2, R3, and R5 are each independently selected from the group of H, aryl, perhaloaryl, C1-8 alkyl, and C1-8 perhaloalkyl, and R4 is aryl in which at least one hydrogen is replaced with a halogen or C1-8 alkyl in which at least one hydrogen is replaced with a halogen. |
地址 |
Suwon-si KR |