发明名称 |
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE |
摘要 |
A method of manufacturing a semiconductor device including a wafer using a plasma etching device which includes a chamber, a chuck provided in the chamber to dispose a wafer to be processed thereon, a focus ring disposed at a peripheral edge portion of the chuck, and a gas supplying mechanism configured to supply various types of gases depending a radial position of the wafer. The method includes: placing a wafer formed with an organic film on the chuck; introducing an etching gas which etches the organic film on the wafer from the process gas supplying mechanism to a central portion of the wafer; introducing an etching inhibiting factor gas having a property of reacting with the etching gas to the peripheral edge portion of the wafer from the gas supplying mechanism; and performing plasma etching on the wafer using the etching gas. |
申请公布号 |
US2014273486(A1) |
申请公布日期 |
2014.09.18 |
申请号 |
US201214353451 |
申请日期 |
2012.10.25 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
Katsunuma Takayuki;Honda Masanobu;Kubota Kazuhiro;Ichikawa Hironobu |
分类号 |
H01L21/3065 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
1. A method of manufacturing a semiconductor device including a wafer using a plasma etching device which includes a chamber, a chuck provided in the chamber so as to dispose a wafer to be processed thereon, a focus ring disposed at a peripheral edge portion of the chuck to surround the disposed position of the wafer, and a gas supplying mechanism configured to supply various types of gases depending a radial position of the wafer, the method comprising:
placing a wafer formed with an organic film on the chuck; introducing an etching gas which etches the organic film on the wafer from the process gas supplying mechanism to a central portion of the wafer; introducing an etching inhibiting factor gas having a property of reacting with the etching gas to the peripheral edge portion of the wafer from the gas supplying mechanism; and performing plasma etching on the wafer using the etching gas. |
地址 |
Tokyo JP |