Method of Fabricating a FinFET Device

摘要

A method includes receiving a substrate having an etch stop layer deposited over the substrate and a dummy mandrel layer deposited over the etch stop layer, forming a plurality of hard mask patterns using a hard mask layer deposited over the dummy mandrel layer, wherein the hard mask patterns includes a first dimension adjusted by a predetermined value, depositing a first spacer layer over the hard mask patterns, wherein a thickness of the first spacer layer is adjusted by the predetermined value, forming a plurality of spacer fins in the dummy mandrel layer, wherein the spacer fins include a second dimension, a first space, and a second space, performing a first fin cut process to remove at least one spacer fin, adjusting the second dimension to a target dimension, performing a second fin cut process, and forming a plurality of fin structures in the substrate by etching the spacer fins.

主权项

1. A method of fabricating a semiconductor device, the method comprising:
receiving a substrate having a first dummy pattern; depositing a first spacer layer over the first dummy pattern; removing the first spacer layer, except from sidewalls of the first dummy pattern to form a first plurality of spacer fins; performing a first fin cut process to remove at least one of the first spacer fins; after the first fin cut process, depositing a second spacer layer over the remaining first spacer fins; removing the second spacer layer, except from sidewalls of the remaining first spacer fins to form a second plurality of spacer fins; performing a second fin cut process to remove some, but not all, of the second plurality of spacer fins; and etching fin structures using the remaining second plurality of spacer fins.