DEPOSITION OF SMOOTH METAL NITRIDE FILMS

摘要

In one aspect, methods of forming smooth ternary metal nitride films, such as TixWyNz films, are provided. In some embodiments, the films are formed by an ALD process comprising multiple super-cycles, each super-cycle comprising two deposition sub-cycles. In one sub-cycle a metal nitride, such as TiN is deposited, for example from TiCl4 and NH3, and in the other sub-cycle an elemental metal, such as W, is deposited, for example from WF6 and Si2H6. The ratio of the numbers of each sub-cycle carried out within each super-cycle can be selected to achieve a film of the desired composition and having desired properties.

主权项

1. An atomic layer deposition (ALD) process for depositing a ternary metal nitride film on a substrate, the process comprising a plurality of super-cycles, each super-cycle comprising a TiN sub-cycle and a W sub-cycle,
wherein the TiN sub-cycle comprises alternately and sequentially contacting the substrate with a titanium precursor and a nitrogen reactant; wherein the W sub-cycle comprises alternately and sequentially contacting the substrate with a tungsten precursor and a second precursor, wherein the second precursor is a silane or borane; and wherein the film does not have a columnar grain structure.