| 发明名称 |
MAGNETIC MEMORY |
| 摘要 |
A magnetic memory according to an embodiment includes at least one MTJ element, the MTJ element including: a magnetic multilayer structure including a first magnetic layer in which a direction of magnetization is fixed, a second magnetic layer in which a direction of magnetization is changeable, and a tunnel barrier layer located between the first and second magnetic layers; a first electrode provided on a first surface of the magnetic multilayer structure; a second electrode provided on a second surface of the magnetic multilayer structure; an insulating film provided on a side surface of the magnetic multilayer structure; and a control electrode provided on the side surface of the magnetic multilayer structure with the insulating film located therebetween, a voltage being applied to the control electrode in a read operation, which increases an energy barrier for changing the magnetization of the second magnetic layer. |
| 申请公布号 |
US2014269038(A1) |
申请公布日期 |
2014.09.18 |
| 申请号 |
US201414198982 |
申请日期 |
2014.03.06 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SHIMOMURA Naoharu;KITAGAWA Eiji;AMANO Minoru;SAIDA Daisuke;YAKUSHIJI Kay;NOZAKI Takayuki;YUASA Shinji;FUKUSHIMA Akio;IMAMURA Hiroshi;KUBOTA Hitoshi |
| 分类号 |
G11C11/16;H01L43/02 |
主分类号 |
G11C11/16 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A magnetic memory comprising at least one MTJ element, the MTJ element comprising:
a magnetic multilayer structure including a first magnetic layer in which a direction of magnetization is fixed, a second magnetic layer in which a direction of magnetization is changeable, and a tunnel barrier layer located between the first magnetic layer and the second magnetic layer; a first electrode provided on a first surface of the magnetic multilayer structure on a side opposite to a side of the tunnel barrier layer relative to the first magnetic layer; a second electrode provided on a second surface of the magnetic multilayer structure on a side opposite to a side of the tunnel barrier layer relative to the second magnetic layer; an insulating film provided on a side surface of the magnetic multilayer structure, which side surface is different from the first surface and the second surface of the magnetic multilayer structure; and a control electrode provided on the side surface of the magnetic multilayer structure with the insulating film located therebetween, a voltage being applied to the control electrode in a read operation, which increases an energy barrier for changing the magnetization of the second magnetic layer. |
| 地址 |
Minato-ku JP |
