MEMORY DEVICE AND METHOD FOR WRITING THEREFOR

摘要

A method of writing a memory cell includes, during a write cycle, causing a voltage level at a power terminal of the memory cell to change from a supply voltage level toward a first voltage level. The voltage level at the power terminal of the memory cell is maintained at the first voltage level for a first predetermined duration. The voltage level at the power terminal of the memory cell is maintained at a second voltage level for a second predetermined duration, where the second voltage level is between the first voltage level and the supply voltage level. During the write cycle, the voltage level at the power terminal of the memory cell is caused to change from the first voltage level toward the supply voltage level.

主权项

1. A method of writing a memory cell, comprising:
during a write cycle:
causing a voltage level at a power terminal of the memory cell to change from a supply voltage level toward a first voltage level;maintaining the voltage level at the power terminal of the memory cell at the first voltage level for a first predetermined duration;maintaining the voltage level at the power terminal of the memory cell at a second voltage level for a second predetermined duration, the second voltage level being between the first voltage level and the supply voltage level; andcausing the voltage level at the power terminal of the memory cell to change from the first voltage level toward the supply voltage level.