SEMICONDUCTOR DEVICE HAVING REDUCED LEAKAGE CURRENT AT BREAKDOWN AND METHOD OF FABRICATING THEREOF

摘要

A semiconductor device having a well, a p well implant bounded at least in part within a substrate by the well, a conductive layer disposed on the substrate, a high voltage n− (HVN−) doped well implanted in the p well implant, a high voltage p doped (HVPD) well implanted in the p well implant, and a drain n− well and a source n− well disposed in the HVN− doped well and HVPD well, respectively, is provided. A method of fabricating the semiconductor device is also provided. In certain embodiments, the method of fabricating the semiconductor device is characterized by implanting the HVN− ions at a first tilt angle and/or implanting the HVPD ions at a second tilt angle.

主权项

1. A semiconductor device comprising:
a substrate; a well in the substrate; a p well implant bounded at least in part within the substrate by the well; a conductive layer disposed on the substrate; a high voltage n− (HVN−) doped well implanted in the p well implant extending into a part of the substrate that underlies a portion of the conductive layer; and a high voltage p doped (HVPD) well implanted in the p well implant extending into another part of the substrate that underlies another portion of the conductive layer, the HVPD well diametrically opposed to the HVN− doped well.