| 发明名称 |
METHOD FOR EXPOSING A WAFER |
| 摘要 |
A method for exposing a wafer according to pattern data using a charged particle lithography machine generating a plurality of charged particle beamlets for exposing the wafer. The method comprises providing the pattern data in a vector format, rendering the vector pattern data to generate multi-level pattern data, dithering the multi-level pattern data to generate two-level pattern data, supplying the two-level pattern data to the charged particle lithography machine, and switching on and off the beamlets generated by the charged particle lithography machine on the basis of the two-level pattern data, wherein the pattern data is adjusted on the basis of corrective data. |
| 申请公布号 |
US2014264085(A1) |
申请公布日期 |
2014.09.18 |
| 申请号 |
US201414287241 |
申请日期 |
2014.05.27 |
| 申请人 |
MAPPER LITHOGRAPHY IP B.V. |
发明人 |
VAN DE PEUT Teunis;WIELAND Marco Jan-Jaco |
| 分类号 |
H01J37/317;H01J37/30 |
主分类号 |
H01J37/317 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for exposing a wafer according to pattern data using a charged particle lithography machine generating a plurality of charged particle beamlets for exposing the wafer, the method comprising:
providing the pattern data in a vector format; rendering the vector pattern data to generate multi-level pattern data; dithering the multi-level pattern data to generate two-level pattern data; supplying the two-level pattern data to the charged particle lithography machine; and switching on and off the beamlets generated by the charged particle lithography machine on the basis of the two-level pattern data; wherein the pattern data is adjusted on the basis of corrective data. |
| 地址 |
Delft NL |
